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Optimizing Gate Dielectrics for Superior Performance

Passivation

Kontrox    for Power and RF

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Gallium Nitride (GaN) has emerged as a leading wide-bandgap semiconductor, revolutionizing high-efficiency power transistors and RF applications. With exceptional electron mobility—over 1,000 times higher than silicon—and competitive manufacturing costs, GaN is driving innovation in power conversion, RF, and analog devices.
 

To fully unlock GaN's potential, high-quality passivation is essential. Our Kontrox-powered passivation technology ensures superior surface integrity, reducing defects and enhancing GaN’s already impressive breakdown voltage, electron mobility, switching speeds, and thermal conductivity. This, in turn, maximizes the reliability and performance of GaN-based power devices.

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This combination of material excellence and advanced passivation positions GaN as the foundation for next-generation power and RF solutions.

Kontrox drastically reduces surface defect state density at the semiconductor-gate dielectric interface.

HR-TEM images from ALD Al2O3-GaAs(100) interface with and without Kontrox treatment. The Kontrox-treated structure exhibits unprecedentedly low levels of surface defects and a sharp III-V dielectric interface.

Achieving high-quality semiconductor-dielectric interfaces is critical for GaN-based power devices. Oxidation-induced defects often compromise device performance, especially in compound semiconductors like GaN and AlGaN.

​Kontrox significantly enhances the surface and interface quality of nitride-based compound semiconductors by forming a thin, high-quality crystalline oxide passivation layer on materials such as AlGaN before gate dielectric deposition, which is crucial for transistor applications. This process effectively eliminates interface defect states, which is essential for applications like the enhancement-mode operation of GaN devices.

 

The passivation benefits of Kontrox are evident when comparing III-V MIS capacitors produced with and without the Kontrox passivation layer for the technologically important AlGaN/GaN MIS structures. Capacitance-voltage (CV) measurements show a drastic reduction in frequency-dependent capacitance dispersion achieved with Kontrox, both for arsenide- and nitride-based MIS structures.

Kontrox    200mm Wafer Pilot Line: Advanced Cluster Passivation Tool
 

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Building on the passivation benefits of Kontrox technology, the Kontrox 200mm Wafer Pilot Line is designed to optimize the integration of high-quality crystalline oxide passivation layers for power and RF transistors, as well as optoelectronic applications. 

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By forming a superior passivation layer on materials like AlGaN, it enhances the gate dielectric interface, reducing defects and improving capacitance-voltage characteristics, leading to higher yields and optimized performance.

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Contact us to explore how our Pilot Line can support your production needs.

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