The interface quality between the bulk semiconductor and the ALD layer is crucial for the performance of advanced transistors.  In III-V-based transistors, manufacturing challenges due to aggressive oxidation cause defects that undermine device stability and efficiency.

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To overcome this, combining Kontrox    passivation technology with ALD provides a powerful solution to drastically reduce interface defects and enhancing device performance, paving way for broader integration of III-V materials into digital electronics beyond silicon technologies.

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Download our brochure to learn more about how our integrated, Kontrox-powered ALD solution can revolutionize your device performance.