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Unlocking Power: Passivating Wide Bandgap Semiconductors Along Moore’s Law Evolution
Passivating Towards More-than-Moore
Atomic scale engineering for InGaAs-based high-performance transistors
Effective passivation of laser facets is the key to obtaining the highest power output of edge-emitting lasers.
Compound semiconductors have been identified as one of the six key enabling technologies necessary for future industrial development.
High-quality passivation of the sidewall is essential in realizing a power-efficient microLED-based display with the desired performance and pixel sizes.
We contribute to global environmental sustainability by improving the power efficiency of semiconductor components and optimizing their manufacturing process.