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Untreated semiconductor surface exhibits a large number of oxidation-induced defects
These atomic-level defects are ultimately an amorphous oxide and contaminations on top of the III-V crystal. This native oxide is naturally characterized by atomic-level bond disorder, dangling bonds, and mixed group III and group V oxides
III-V semiconductors typically suffer from high defect state densities due to native oxides that form immediately upon air exposure, severely degrading device performance.
Leveraging our extensive expertise in surface engineering, we developed Kontrox, a breakthrough technology that addresses native oxidation in compound semiconductors.
With precise atomic-level control of the oxidation process, we create a high-quality semiconductor surface that is highly resistant to further oxidation.
Kontrox transforms harmful amorphous oxides into thermodynamically stable crystalline oxides, enhancing interface quality and dramatically boosting the efficiency and performance of III-V devices, setting new industry benchmarks.
Scope of applicability
Kontrox provides high-quality passivation in a wide range of III-V semiconductor materials and device types. The technology is ready for commercialization for the materials listed below. However, technology applicability extends beyond those, and we are available for implementation studies for other III-V materials and device types.
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Contact us for more information.
Optoelectronics
• Mesa sidewall passivation
• Barrier layer in QW stack
• Facet passivation
CMOS
• Key enabler for III-V MOS-based transistors for gate dielectric interface passivation
RF & Power Electronics
• Interface passivation layer for MOS-HEMT
Laser diodes
LED
CPV
IR detectors
MOS III-V
p-HEMT
m-HEMT
GaN
GaAs
AIGaAs
InAlGaAs
InGaAs
InP
GalnP
AlGaInP
GaN
AIGaN
InGaN
GaAs
AlGaP
AIGaInP
GaP
AIInP
GalnP
GaInNAsSb
GaAs
InGaAs
AlGaInP
AlGaAs
GaAs
InGaAs
InSb
InP
GaSb
InAs
InGaAs
InSb
InP
InGaAs
GaInP
GaN
AlGaN
InGaN
GaAs
AIGaAs
GaInP
InGaAs
