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Pioneering III-V Semiconductor Passivation for Next-Level Device Performance

Through precise atomic-level control, Kontrox    passivation technology ensures semiconductor surfaces of unmatched quality, offering exceptional resistance to oxidation for long-lasting, reliable device performance.

Compound semiconductors, especially III-V materials, often suffer from oxidation-induced defects, compromising their performance. Kontrox addresses this challenge by targeting native oxidation, enhancing the chip interface and improving device efficiency.

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By optimizing semiconductor surfaces, Kontrox improves III-V device performance, sets new industry benchmarks, and streamlines manufacturing, reducing costs and enhancing access to advanced semiconductor technologies.

Watch the video below to learn more about how our innovation works at the atomic level, setting new standards for high-performance semiconductor applications.

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Scope of Applicability

Kontrox offers superior passivation for a diverse range of III-V semiconductor materials and device types, ensuring optimal quality, performance and reliability. While the technology is readily available for commercialization with the listed materials below, its applicability extends beyond these. We welcome implementation studies for other III-V materials and device types to explore the full potential of Kontrox.

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Contact us to discover how Kontrox can optimize performance for your specific material types and unique semiconductor applications.

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  • Optimized facet passivation for EELs to enhance stability, lifetime and reliability

  • Increased optical output via reduced non-radiative recombination at the facet

  • Delayed COMD threshold via minimized facet heating

  • Mesa sidewall passivation to cut leakage and boost efficiency

  • Defect suppression for better quantum yield

  • Optimized for microLEDs in high-res displays

  • Lower recombination losses for brighter, longer-lasting devices

  • HEMT interface passivation to reduce traps and boost mobility

  • Gate dielectric optimization for stability

  • Surface passivation for nitride power devices and arsenide/phosphide devices in RF/low-power applications

  • Enhanced thermal stability for high-power, RF applications

Laser diodes

LED

IR detectors

GaN

p-HEMT

m-HEMT

GaAs

AIGaAs

InAlGaAs

InGaAs

InP

GalnP

AlGaInP

GaN

InGaN

GaN

AIGaN

InGaN

GaAs

AlGaP

AIGaInP

GaP

GaAs
InGaAs
InSb
InP
GaSb

GaN
AlGaN
InGaN

GaAs
AIGaAs
GaInP
InGaAs

InP
InGaAs
GaInP

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